International Journal of Electronics and Microcircuits
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P-ISSN: 2708-4493, E-ISSN: 2708-4507

2023, Vol. 3, Issue 1, Part A


On approach to optimize manufacturing of field-effect heterotransistors in the framework of the circuit of a MOSFET-filter to increase their integration rate. On influence mismatch-induced stress


Author(s): EL Pankratov

Abstract: In this paper we introduce an approach to increase density of field-effect transistors framework a circuit of a MOSFET-filter. In the framework of the approach we consider manufacturing the inverter in heterostructure with specific configuration. Several required areas of the heterostructure should be doped by diffusion or ion implantation. After that dopant and radiation defects should by annealed in the framework of optimized scheme. We also consider an approach to decrease value of mismatch-induced stress in the considered heterostructure. We introduce an analytical approach to analyze mass and heat transport in heterostructures during manufacturing of integrated circuits with account mismatch-induced stress.

Pages: 36-58 | Views: 577 | Downloads: 235

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International Journal of Electronics and Microcircuits
How to cite this article:
EL Pankratov. On approach to optimize manufacturing of field-effect heterotransistors in the framework of the circuit of a MOSFET-filter to increase their integration rate. On influence mismatch-induced stress. Int J Electron Microcircuits 2023;3(1):36-58.
International Journal of Electronics and Microcircuits
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