International Journal of Electronics and Microcircuits
  • Printed Journal
  • Refereed Journal
  • Peer Reviewed Journal

P-ISSN: 2708-4493, E-ISSN: 2708-4507

2023, Vol. 3, Issue 1, Part A


On approach to optimize manufacturing of field-effect heterotransistors in the framework of a cascode amplifier to increase their integration rate, influence mismatch-induced stress


Author(s): EL Pankratov

Abstract: In this paper we introduce an approach to increase density of field-effect transistors in the framework of a cascode amplifier. In the framework of the approach we consider manufacturing the cascode amplifier in a heterostructure with specific configuration. Several required areas of the heterostructure should be doped by diffusion or ion implantation. After that dopant and radiation defects should by annealed framework optimized scheme. We also consider an approach to decrease value of mismatch-induced stress in the considered heterostructure. We introduce an analytical approach to analyze mass and heat transport in heterostructure during manufacturing of integrated circuits with account mismatch-induced stress.

Pages: 01-24 | Views: 410 | Downloads: 181

Download Full Article: Click Here

International Journal of Electronics and Microcircuits
How to cite this article:
EL Pankratov. On approach to optimize manufacturing of field-effect heterotransistors in the framework of a cascode amplifier to increase their integration rate, influence mismatch-induced stress. Int J Electron Microcircuits 2023;3(1):01-24.
International Journal of Electronics and Microcircuits
Call for book chapter