International Journal of Electronics and Microcircuits
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P-ISSN: 2708-4493, E-ISSN: 2708-4507

2021, Vol. 1, Issue 2, Part A


An approach to optimize manufacturing of a compact transimpedance amplifier based on heterostructures to increase density of their elements: Influence of mismatch induced stress and porosity of materials on technological process


Author(s): EL Pankratov

Abstract: In this paper we introduce an approach to increase density of field-effect transistors framework a compact transimpedance amplifier. Framework the approach we consider manufacturing the inverter in heterostructure with specific configuration. Several required areas of the heterostructure should be doped by diffusion or ion implantation. After that dopant and radiation defects should by annealed framework optimized scheme. We also consider an approach to decrease value of mismatch-induced stress in the considered heterostructure. We introduce an analytical approach to analyze mass and heat transport in heterostructures during manufacturing of integrated circuits with account mismatch-induced stress.

Pages: 24-33 | Views: 716 | Downloads: 300

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International Journal of Electronics and Microcircuits
How to cite this article:
EL Pankratov. An approach to optimize manufacturing of a compact transimpedance amplifier based on heterostructures to increase density of their elements: Influence of mismatch induced stress and porosity of materials on technological process. Int J Electron Microcircuits 2021;1(2):24-33.
International Journal of Electronics and Microcircuits
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