2021, Vol. 1, Issue 1, Part A
On increasing of integration rate of field-effect hetero-transistors framework a comparator in latch state
Author(s): EL Pankratov
Abstract: In this paper we introduce an approach to increase integration rate of elements of the comparator in latch state. Framework the approach we consider a hetero-structure with special configuration. Several specific areas of the hetero-structure should be doped by diffusion or ion implantation. Annealing of dopant and/or radiation defects should be optimized.
Pages: 01-21 | Views: 832 | Downloads: 368
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How to cite this article:
EL Pankratov. On increasing of integration rate of field-effect hetero-transistors framework a comparator in latch state. Int J Electron Microcircuits 2021;1(1):01-21.
