2025, Vol. 5, Issue 2, Part A
Advancements in microcircuit design for next-generation wireless communication systems
Author(s): Emily R. Hughes, Michael T. Lawson and Sarah L. Cortez
Abstract: The rapid evolution of next-generation wireless technologies, including 5G and 6G, has intensified the demand for microcircuit architectures capable of operating at extremely high frequencies while maintaining low power consumption, high reliability, and scalability. This research investigates the integration of advanced semiconductor materials with AI-assisted design methodologies to enhance microcircuit performance for high-capacity communication systems. Using Gallium Nitride (GaN), Gallium Arsenide (GaAs), and Silicon-Germanium (SiGe) substrates, a series of microcircuit prototypes were designed, simulated, fabricated, and experimentally evaluated across 28, 60, and 90 GHz bands. The proposed AI-optimized GaN/SiGe circuits demonstrated significant improvements in gain, noise figure, power-added efficiency, linearity, error vector magnitude, impedance matching, thermal stability, and power consumption compared to baseline CMOS designs. Statistical analysis confirmed the significance of these performance gains, particularly in energy efficiency and spectral integrity. These findings provide strong evidence that combining material innovation with intelligent optimization can effectively address performance limitations in conventional microcircuit architectures, paving the way for high-efficiency, low-latency wireless networks. The outcomes offer practical pathways for industrial adoption and large-scale implementation in emerging communication infrastructures, including dense urban networks, IoT systems, and high-speed backhaul applications.
Pages: 18-23 | Views: 227 | Downloads: 60
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How to cite this article:
Emily R. Hughes, Michael T. Lawson, Sarah L. Cortez. Advancements in microcircuit design for next-generation wireless communication systems. Int J Electron Microcircuits 2025;5(2):18-23.
