2024, Vol. 4, Issue 1, Part A
Gate voltage spike mechanism during IGBT switching operations under digital gate control
Author(s): Tomoyuki Kasamaki and Yuji Ushimoto
Abstract: This paper explores the phenomenon of gate voltage spikes during the switching operations of Insulated Gate Bipolar Transistors (IGBTs) under digital gate control systems. It aims to elucidate the mechanisms behind these spikes, their implications for power electronic systems' efficiency and reliability, and propose mitigation strategies. Through experimental and simulation studies, the paper delves into the interaction between gate drive characteristics and the dynamic behavior of IGBTs, highlighting the critical role of digital control strategies in managing transient events.
Pages: 16-19 | Views: 38 | Downloads: 16
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How to cite this article:
Tomoyuki Kasamaki, Yuji Ushimoto. Gate voltage spike mechanism during IGBT switching operations under digital gate control. Int J Electron Microcircuits 2024;4(1):16-19.
