International Journal of Electronics and Microcircuits
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P-ISSN: 2708-4493, E-ISSN: 2708-4507

2023, Vol. 3, Issue 1, Part A


On increasing of integration rate of elements in a MOSFET-filter


Author(s): EL Pankratov

Abstract: In this paper we introduce an approach to increase integration rate of elements in a MOSFET-filter. The approach based on decreasing of dimension of elements of the invertor (diodes and bipolar transistors) due to manufacturing of these elements by diffusion or ion implantation in a heterostructure with specific configuration and optimization of annealing of dopant and radiation defects.

DOI: 10.22271/27084493.2023.v3.i1a.36

Pages: 25-35 | Views: 485 | Downloads: 205

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International Journal of Electronics and Microcircuits
How to cite this article:
EL Pankratov. On increasing of integration rate of elements in a MOSFET-filter. Int J Electron Microcircuits 2023;3(1):25-35. DOI: 10.22271/27084493.2023.v3.i1a.36
International Journal of Electronics and Microcircuits
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