2023, Vol. 3, Issue 1, Part A
On increasing of integration rate of elements in a MOSFET-filter
Author(s): EL Pankratov
Abstract: In this paper we introduce an approach to increase integration rate of elements in a MOSFET-filter. The approach based on decreasing of dimension of elements of the invertor (diodes and bipolar transistors) due to manufacturing of these elements by diffusion or ion implantation in a heterostructure with specific configuration and optimization of annealing of dopant and radiation defects.
DOI: 10.22271/27084493.2023.v3.i1a.36
Pages: 25-35 | Views: 434 | Downloads: 180
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How to cite this article:
EL Pankratov. On increasing of integration rate of elements in a MOSFET-filter. Int J Electron Microcircuits 2023;3(1):25-35. DOI: 10.22271/27084493.2023.v3.i1a.36
